A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors
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A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors

        

A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors

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As the device size of the conventional planar metal oxide semiconductor field effect transistor (MOSFET) shrinks into the deep sub micron regime, the device performance significantly degrades mainly due to the short-channel effect. The silicon nanowire field-effect transistor (SNWFET) is considered as an attractive alternative to the planar MOSFET, because its enhanced gate control offers many advantages. In this work, the device characteristics of SNWFET have been investigated by solving the... More
Material Type: Presentation
Technical Format: Flash
Date Added to MERLOT: February 15, 2006
Date Modified in MERLOT: February 15, 2006
Author:
Submitter: nanoHUB

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Primary Audience: College General Ed
Mobile Compatibility: Not specified at this time
Language: English
Cost Involved: no
Source Code Available: no
Accessiblity Information Available: no
Creative Commons: unsure

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