Material Detail

Recent achievements in the design and synthesis of new arene/heteroaromatic oligomers/molecules functionalized with a variety of phenacyl, alkylcarbonyl, and perfluoroalkylcarbonyl will be presented. These organic semiconductors exhibit low-lying LUMOs allowing efficient electron injection/transport. Organic field-effect transistors (OFETs) fabricated by conventional methods exhibit electron mobilities as high as 2 cm^2 V^-1 s^-1 for vapor-deposited films and 0.25 cm^2 V^-1 s^-1 for solution-cast films with current modulation > 10^8 [1]. Furthermore, these materials are compatible with new classes of nanoscopic layer-by-layer self-assembled multilayers (SAMT) and crosslinked polymeric blend (CPB) gate dielectrics developed in our group. The new dielectric materials are fabricated conveniently via solution-phase methodologies at very low temperature (< 110 °C) and exhibit very low leakage currents (< 10^-8 A cm^-2), high breakdown fields (> 3 MV cm^-1), very high capacitance values (up to 2500 nF cm^-2) and are fully compatible with both electron- and hole-transporting organic (and inorganic) semiconductors. OFETs and complementary inverter devices operating at very low voltages have been fabricated [2]. [1] Yoon, M.-H.; DiBenedetto, S.; Facchetti, A.; Marks, T.J. J. Am. Chem. Soc. 2005, 127, 1348. b) Facchetti, A.; Mushrush, M.; Yoon, M.-H.; Hutchison, G. R.; Ratner, M. A.; Marks, T. J. J. Am. Chem. Soc. 2004, 126, 13859. c) Facchetti, A.; Yoon, M.-H.; Stern, C. L.; Hutchison, G. R.; Ratner, M. A.; Marks, T. J. J. Am. Chem. Soc. 2004, 126, 13480. d) Jones, B. A.; Ahrens, M. J.; Yoon, M.-H.; Facchetti, A.; Marks, T. J.; Wasielewski, M. R. Angew. Chem., Int. Ed. 2004, 43, 6363. e) Facchetti, A.; Mushrush, M.; Katz, H. E.; Marks, T. J. Adv. Mater. 2003, 15, 33. f) Facchetti, A.; Deng, Y.; Wang, A.; Koide, Y.; Sirringhaus, H.; Marks, T. J.; Friend, R. H. Angew. Chem., Int. Ed. 2000, 39, 4547. [2] Facchetti, A.; Yoon, M.-H.; Marks, T. J. Adv. Mater. 2005, in press. a) Yoon, M.-H.; Yan, H.; Facchetti, A.; Marks, T.J. J. Am. Chem. Soc. 2005, in press. c. Yoon, M.-H.; Facchetti, A.; Marks, T.J. Proc. Nat. Acad. Sci. USA, 2005, 102, 4678.

Disciplines:

• Science and Technology  / Nanotechnology