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"Electronic Transport in Semi-conducting Carbon Nanotube Transistor Devices" icon

Electronic Transport in Semi-conducting Carbon Nanotube Transistor Devices

Recent demonstrations of high performance carbon nanotube field-effect transistors (CNFETs) highlight their potential for a future nanotube-based electronics. Besides being just a nanometer in diameter, carbon nanotubes offer intrinsic advantages if compared with silicon that are responsible for their outstanding properties. Their one-dimensional character is advantageous for a low scattering probability and consequently a high on-current in a transistor device. Electrons and holes behave similarly in CNs, enabling a complementary metal-oxide semiconductor (CMOS) like technology with n-type and p-type transistors. Since chemical bonds in case of carbon nanotubes are completely satisfied, problems with dangling bonds, as at any silicon surface, do not exist. This implies that carbon... Show More
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