Measuring the electrical conductivity through a specific strand of DNA is of great interest to the nano-science and...
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Measuring the electrical conductivity through a specific strand of DNA is of great interest to the nano-science and engineering community. This work focuses on the electrical conduction through 15 base-pair, double helix oligo-nucleotides with various sequences. The current-voltage characteristics of the double strands are measured in a metal(Au)/ds-DNA/metal(Au) structure fabricated by immobilizing the dithiol derivatized double-stranded DNA oligionuleotide sequences in nanoscale gaps between pairs of gold (Au) electrodes, achieved through an electromigration-induced break-junction (EIBJ) technique performed at room temperature. The double-stranded DNA configuration was immobilized on the electrodes by assembling the oligonucleotides into the double-helix conformation in an aqueous solution, reacting these solutions with the electrodes in an aqueous solution, locking the double-helix configuration with a polycation, and rinsing with copious amount of ultrapure water to remove any residual salt. In measurements on nominally dry devices, approximately 1GΩ conduction was measured through a sequence of GC rich, 3’ thiol labeled DNA. Replacing a single GC-pair in the center of the sequence with an AT pair results in a conductance decrease of more than one order of magnitude. Negligible conductivity was measured in AT rich or 5’ thiol labeled DNA. This is consistent with single molecule conduction measurements where enhanced conductivity has been observed in GC rich DNA. Higher conductivity is observed for devices immobilized with GC-rich DNA in a higher concentration of salt (NaCl) in the standard phosphate buffer silane (PBS) solution, which is attributed to a larger number of DNA-molecules immobilized between the electrodes. This study demonstrates that EIBJ technique at room temperature can be used to efficiently build hybrid nano-bio inspired devices with symmetric electrodes and useful experiments can be performed to understand the electrical properties in nanometer scale materials such as DNA.
Material Type:
Presentation
Author:
Kyung J. Jeong, Ajit Mahapatro, Sugata Bhattacharya, Gil Lee, David Janes
Date Added:
Feb 16, 2006
Date Modified:
Feb 16, 2006
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Learning experiences of the future will be multi-sensory, engage technologies and significant computational power...
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Learning experiences of the future will be multi-sensory, engage technologies and significant computational power continuously and invisibly, and will be completely engaging. The emergence of highly cross-disciplinary fields like nanoscale science and technology, bioinformatics, and cyberinfrastructure sciences has brought into sharp relief the need to transcend computational, perceptual, and imagination walls in order to educate future generations of students. There have been repeated calls in various national reports for the need to bridge discovery and learning in non-trivial ways. In order to reach the current and future generation of students – the aptly labeled Gen-Z or the digital generation – information technology needs to be at the heart of educational efforts and play more than an add-on role. Simply put, we need to rethink education ground-up.This talk will focus on how the nanoHUB – the front face of the NSF-funded Network for Computational Nanotechnology – is enabling new advances in the way cutting research is delivered to students. It will include a brief overview of some of the main educational tools. The talk will also explore the need for fundamental research in instruction delivery systems and how on-going work in the nanoHUB is influencing the need for such research.
Material Type:
Presentation
Author:
Krishna P. C. Madhavan
Date Added:
Feb 15, 2006
Date Modified:
Feb 15, 2006
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Material Type:
Presentation
Author:
Ron Reifenberger
Date Added:
Feb 17, 2006
Date Modified:
Feb 17, 2006
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Select this link to open drop down to add material Exploiting the Electronic Properties of Protiens: An Approach to Nanoscale Electronics to your Bookmark Collection or Course ePortfolio
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Three exponentials have been the foundation of today's electronics, which are often taken for granted--namely transistor...
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Three exponentials have been the foundation of today's electronics, which are often taken for granted--namely transistor density, performance, and energy. Moore's Law captures the impact of these exponentials. Exponentially increasing transistor integration capacity, and exponentially increasing transistor performance, allowed us to realize complex architectures, delivering exponentially increasing performance. And exponentially decreasing energy per logic operation kept power dissipation within reasonable limits, making Moore's Law a reality. To keep this treadmill going, we will face exponentially increasing challenges, such as active and leakage power, variability, and design efficiency. These challenges, once addressed, will undoubtedly yield exponential rewards, as we have enjoyed in the past.This talk will discuss potential solutions in all disciplines, such as microarchitecture, circuits, design technologies & methodologies, thermals, and power delivery. At ISSCC 2003, Gordon Moore showed that for every ant in the world today there are 100 transistors; our job is to grow that transistor number to 10,000. We'd like to see 100 times more transistors in the world for electronics and computing power by the end of the decade, and there is no reason we can't succeed.
Material Type:
Presentation
Author:
Shekhar Borkhar
Date Added:
Feb 16, 2006
Date Modified:
Feb 16, 2006
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This resource depicts the step-by-step process by which the transistors of an integrated circuit are made.
Material Type:
Animation
Author:
John Bean
Date Added:
Jan 06, 2006
Date Modified:
Jan 06, 2006
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Strained Si and SiGe MOSFET technologies face fundamental limits towards the end of this decade when the technology roadmap...
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Strained Si and SiGe MOSFET technologies face fundamental limits towards the end of this decade when the technology roadmap calls for gate dimensions of 45 nm headed for 22 nm. This fact, and difficulties in developing a suitable high-K dielectric, have stimulated the search for alternatives to brute-force scaling of Si and SiGe MOSFETs.As part of this search we are exploring the use of InAs as an alternative to nanoscaled Si for future generations of high bandwidth MOSFET-based circuits. InAs has a high electron mobility. Its vsat is theoretically 20 times higher than silicon's. Our modeling shows that an HBT could achieve fT and fmax approaching 1 THz for an emitter-base and collector-base dimension of 0.5 _m x 4.0 _m (2 _m2). A simple MOSFET model predicts an fT of about 3 THz for a gate length of 0.1 µm. The model is consistent with known experimental measurements of InAs materials parameters. InAs technology may support ultra-fast devices at 90 nm and below, or performance at 90 nm comparable to strained Si and SiGe at 45 and 22 nm features. To support the integration of InAs devices with Si circuits, we are developing a high quality InAs epilayer technology using non-lattice-matched GaP substrates.
Material Type:
Presentation
Author:
Jerry M. Woodall
Date Added:
Feb 17, 2006
Date Modified:
Feb 17, 2006
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Select this link to open drop down to add material Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap? to your Bookmark Collection or Course ePortfolio
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Martin and Laura have an interesting debate about the feasibility of Molecular Manufacturing. Can molecular assemblers be...
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Martin and Laura have an interesting debate about the feasibility of Molecular Manufacturing. Can molecular assemblers be developed to create new materials, new devices, and even macroscopic objects? Find out... If Martin ever wakes up!
Material Type:
Animation
Author:
LSPM Team, EPICS
Date Added:
Jan 06, 2006
Date Modified:
Jan 06, 2006
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FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire...
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FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a cylindrical geometry. Only the lowest subband is considered, but it is readily modifiable to include multiple subbands.
Material Type:
Simulation
Author:
Mark Lundstrom, Supriyo Datta, Jing Guo, Anisur Rahman, Akira Matsudaira, Shaikh Ahmed
Date Added:
Jan 05, 2006
Date Modified:
Dec 08, 2015
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A new concept for a single molecule transistor is demonstrated. A single chargeable atom adjacent to a molecule shifts...
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A new concept for a single molecule transistor is demonstrated. A single chargeable atom adjacent to a molecule shifts molecular energy levels into alignment with electrode levels, thereby gating current through the molecule. Seemingly paradoxically, the silicon substrate to which the molecule is covalently attached provides 2, not 1, effective contacts to the molecule. This is achieved because the single charged silicon atom is at a substantially different potential than the remainder of the substrate. Charge localization at one dangling bond is ensured by covalently capping all other surface atoms. Dopant level control and local Fermi level control can change the charge state of that atom. The same configuration is shown to be an effective transducer to an electrical signal of a single molecule detection event.Because the charged atom induced shifting results in conductivity changes of substantial magnitude, these effects are easily observed at room temperature.One electron is sufficient to achieve gating because high gate efficiency is achieved.Because one electron achieves gating, compared to ~10^5 in a modern transistor, enormous speed, and minimal power consumption are implied.Though enormous challenges must be overcome before this concept enables a new technology, it appears to be worth facing those challenges.
Material Type:
Presentation
Author:
Robert Wolkow
Date Added:
Feb 16, 2006
Date Modified:
Feb 16, 2006
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Microcantilever based biochemical sensing has shown tremendous promise for ultrasenstive detection in both liquid and ambient...
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Microcantilever based biochemical sensing has shown tremendous promise for ultrasenstive detection in both liquid and ambient conditions. However improving the sensitivity, reliability and robustness of these sensors so they can achieve their potential needs substantial efforts in (a) chemical functionalization of the sensor, (b) mechanical transduciton of the binding events, and (c) integration of the sensors into larger systems. In this talk we will focus on our groups efforts at developing new ultransensitive paradigms for mechanical transduction of binding events. We will focus on our results on the use of (i) higher cantilever modes, (ii) the used of carbon nanotube whistered cantilevers, (iii)the development of mode localization sensors and (iv) the performance of cantilever sensors under liquids.
Material Type:
Presentation
Author:
Arvind Raman
Date Added:
Feb 16, 2006
Date Modified:
Feb 16, 2006
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