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Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap?

        

Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap?

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Strained Si and SiGe MOSFET technologies face fundamental limits towards the end of this decade when the technology roadmap calls for gate dimensions of 45 nm headed for 22 nm. This fact, and difficulties in developing a suitable high-K dielectric, have stimulated the search for alternatives to brute-force scaling of Si and SiGe MOSFETs.As part of this search we are exploring the use of InAs as an alternative to nanoscaled Si for future generations of high bandwidth MOSFET-based circuits. InAs... More
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Material Type: Presentation
Technical Format: Audio
Date Added to MERLOT: February 17, 2006
Date Modified in MERLOT: February 17, 2006
Author:
Submitter: nanoHUB

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Primary Audience: College General Ed
Mobile Compatibility: Not specified at this time
Language: English
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