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Developments of high performance n-type carbon nanotube field-effect transistors

Developments of high performance n-type carbon nanotube field-effect transistors

This video was recorded at Kolokviji na Institutu "Jožef Stefan". As scaling down with Moore's law, the modern silicon complementary metaloxidesemiconductor (CMOS) technology is facing great challenges and people are looking for alternatives. Carbon nanotube (CNT), due to its novel structure and properties, has been regarded as one of the most promising building blocks for the future integrated circuits. Since the first CNT fieldeffect transistor (CNTFET) was designed in 1998, device performance hasbeen continually improved. By using palladium (Pd) electrodes and highk materials (which are less prone to current leakage) as gate dielectrics, ptype CNTFETs have now surpassed the capabilities of stateoftheart silicon pMOSFETs. However, the development of ntype CNTFETs has lagged behind. This... Show More

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