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Self-catalysed growth of GaAs nanowires by MBE

Self-catalysed growth of GaAs nanowires by MBE

This video was recorded at SLONANO conference, Ljubljana 2007. Semiconductor nanowires (NWs) growth is typically assisted by a metal particle, called the catalyst. The use as the catalyst of a material different from the components of the wire may change the semiconductor properties due to the diffusion of the catalyst in the nanowire body during the growth. Moreover, the most commonly used catalyst is Au, a metal that is incompatible with the Si technology. For the above mentioned reasons it is therefore of importance to develop a technology leading to a catalyst-free growth of semiconductor nanowires. Here we report preliminary results on catalyst-free growth of GaAs NWs by molecular beam epitaxy. The GaAs NWs have been grown on cleaved edges of Si wafers, with no catalyst pre-deposition.... Show More


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