Material Detail
Chemical Mechanical Planarization - Multilayer planarization
There are many different ways in which the dual damascene process is used. The animation shows an overview of one process: -In the dual damascene process, a low-k dielectric is added. -CMP is used to remove dielectric down to depth of the vias. -Silicon nitride is deposited and the resist is added and exposed. -The surface is etched and a second layer of low-k dielectric is added. -CMP is used to remove the dielectric down to the final thickness of the metal lines. -Resist is added for vias and metal lines. -The surface is exposed and removed. -The dielectric is etched and the resist is removed. -The metal barrier and metal are added. -Depending on the process, this could be copper. -The metal and metal barrier are removed through CMP. THe objective is to explain the dual damascene process.This simulation is from Module 068 of the Process & Equipment III Cluster of the MATEC Module Library (MML).
Quality
- User Rating
- Comments
- Learning Exercises
- Bookmark Collections
- Course ePortfolios
- Accessibility Info
More about this material
- Material Type:
- Presentation
- Date Added to MERLOT:
- July 18, 2016
- Date Modified in MERLOT:
- January 24, 2019
- Author:
- Maricopa Advanced Technology Education Center (MATEC)
- Submitter:
-
Barbra Bied Sperling
