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Chemical Mechanical Planarization Simulation

Chemical Mechanical Planarization Simulation

In the simulation you will use controls (drop down menus) to adjust down force and platen speed parameters to determine an optimum CMP process recipe for focal semiconductor manufacturing. You may assume that focal is using a rotational tool with on-the-pad slurry delivery, and wafer/polish pressure is through the carrier. You will keep track of your "test runs" in separate tables, one for down force and one for platen speed, once you've observed the effect of the parameters on wafer thickness and uniformity. Finally, you will make predictions about the necessary settings for achieving a prescribed WIWNU goal. The objective is to solve for removal rate in a simulated CMP process. Adjust planarization equipment process parameters to determine the optimal values needed to achieve the processing objectives in a simulated CMP process. Estimate control parameter settings in a CMP recipe simulation for optimal WIWNU and removal rate. This simulation is from Module 068 of the Process & Equipment III Cluster of the MATEC Module Library (MML).

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